发明名称 |
TWO-STEP HARDMASK FABRICATION METHODOLOGY FOR SILICON WAVEGUIDES |
摘要 |
<p>Techniques are disclosed for efficiently fabricating semiconductors including waveguide structures. In particular, a two-step hardmask technology is provided that enables a stable etch base within semiconductor processing environments, such as the CMOS fabrication environment. The process is two-step in that there is deposition of a two-layer hardmask, followed by a first photolithographic pattern, followed by a first silicon etch, then a second photolithographic pattern, and then a second silicon etch. The process can be used, for example, to form a waveguide structure having both ridge and channel configurations, or a waveguide (ridge and/or channel) and a salicide heater structure, all achieved using the same hardmask. The second photolithographic pattern allows for the formation of the lower electrical contacts to the waveguides (or other structures) without a complicated rework of the hardmask.</p> |
申请公布号 |
WO2010025264(A1) |
申请公布日期 |
2010.03.04 |
申请号 |
WO2009US55213 |
申请日期 |
2009.08.27 |
申请人 |
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.;CAROTHERS, DANIEL, N.;HILL, CRAIG, M.;POMERENE, ANDREW TS |
发明人 |
CAROTHERS, DANIEL, N.;HILL, CRAIG, M.;POMERENE, ANDREW TS |
分类号 |
G02B6/10 |
主分类号 |
G02B6/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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