发明名称 |
Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity |
摘要 |
The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL.
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申请公布号 |
US7670867(B2) |
申请公布日期 |
2010.03.02 |
申请号 |
US20050242817 |
申请日期 |
2005.10.03 |
申请人 |
JEONG CHANG-YOUNG;SHIN DAE-UNG;KIM HONG-IK |
发明人 |
JEONG CHANG-YOUNG;SHIN DAE-UNG;KIM HONG-IK |
分类号 |
G02B3/00;H01L21/00;H01L27/00;H01L27/14;H01L27/146;H01L31/062;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
G02B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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