METHOD FOR IMPROVING RESIST SENSITIVITY

摘要

The sensitivity of a resist formed from hydrosilsesquioxane when a pattern is formed in the resist by irradiation with a charged particle beam is improved. A method for improving the sensitivity of a resist formed from hydrosilsesquioxane to a charged particle beam when a pattern is formed in the resist by irradiation with the charged particle beam is characterized in that the resist which is formed from hydrosilsesquioxane and applied onto a substrate is prebaked at t°C (where 20=t=300), a composition containing a water-soluble conductive polymer compound is applied onto the surface to be irradiated with the charged particle beam of the prebaked resist, the applied composition is baked at T°C (where 0=T