发明名称 Silicon-based light emitter for use in photonic crystal structure for laterally radiating light, has silicon dioxide-layer provided on substrate, where emitter radiates light that is coupled into wave guide by resonator structure
摘要 <p>The emitter has a front-sided metal contact (10), a dielectric protection layer (9), and a luminescence center (8) including a silicon dioxide-layer (2) provided on a silicon-on-insulator substrate, where the emitter radiates a light laterally. The light is coupled into a wave guide (13) by evanescent field coupling or by a resonator structure, where the emitter is processed on a silicon-on-insulator. The silicon dioxide layer is utilized as a slot-wave guide. A cavity (4) is etched with vertical walls in an upper silicon layer (1) of the substrate.</p>
申请公布号 DE102008037225(A1) 申请公布日期 2010.02.25
申请号 DE20081037225 申请日期 2008.08.11
申请人 FORSCHUNGSZENTRUM DRESDEN - ROSSENDORF E.V. 发明人 REBOHLE, LARS;SKORUPA, WOLFGANG
分类号 H01L33/00 主分类号 H01L33/00
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