发明名称 |
Silicon-based light emitter for use in photonic crystal structure for laterally radiating light, has silicon dioxide-layer provided on substrate, where emitter radiates light that is coupled into wave guide by resonator structure |
摘要 |
<p>The emitter has a front-sided metal contact (10), a dielectric protection layer (9), and a luminescence center (8) including a silicon dioxide-layer (2) provided on a silicon-on-insulator substrate, where the emitter radiates a light laterally. The light is coupled into a wave guide (13) by evanescent field coupling or by a resonator structure, where the emitter is processed on a silicon-on-insulator. The silicon dioxide layer is utilized as a slot-wave guide. A cavity (4) is etched with vertical walls in an upper silicon layer (1) of the substrate.</p> |
申请公布号 |
DE102008037225(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
DE20081037225 |
申请日期 |
2008.08.11 |
申请人 |
FORSCHUNGSZENTRUM DRESDEN - ROSSENDORF E.V. |
发明人 |
REBOHLE, LARS;SKORUPA, WOLFGANG |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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