| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device which is improved in sensitivity even when pixels are microfabricated. Ž<P>SOLUTION: The solid-state imaging device includes a pixel having a light-receiving unit 1 configured such that when light L1 is received, a pinning state of a surface of a semiconductor region 2 of a first conductivity type on the side of an insulating film 3 is modulated and charge e2 generated from the surface of the semiconductor region 2 serves as signal charge. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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