| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which has excellent oscillation characteristics by suppressing the thickness of a GaAs layer on a diffraction grating layer small and preventing reduction in light confinement in an active layer, and to provide a method of manufacturing the semiconductor laser. SOLUTION: The semiconductor laser includes the active layer, a first GaAs layer having recesses formed at cyclic intervals on the active layer, an InGap layer buried in the recesses, and a second GaAs layer formed on the InGap layer and recesses. Each of the recesses has a bottom where the crystal orientation of the first GaAs layer includes a (100) plane and a slope where at least part of the crystal orientation of the first GaAs layer includes a (111) plane A, and the interval between an upper end of one recess and an upper end of the other adjacent recess on an upper surface of the first GaAs layer is smaller than the width of the bottom of the recess. Further, the semiconductor laser has a first cladding layer of a first conductivity type formed on a substrate where the crystal orientation of GaAs of the first conductivity type includes a (100) plane, and a second clad layer of a second conductivity type formed on the second GaAs layer. COPYRIGHT: (C)2010,JPO&INPIT
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