发明名称 |
RESISTIVE MEMORY DEVICES USING ASSYMETRICAL BITLINE CHARGING AND DISCHARGING |
摘要 |
A nonvolatile memory device includes a plurality of memory banks, each including a plurality of nonvolatile resistive memory cells (e.g. PRAM cells). The device also includes a write global bitline shared by the memory banks and a read global bitline shared by the memory banks. The device further includes a control circuit configured to write data to a selected nonvolatile memory cell in a first memory bank using the write global bitline while reading data from a selected nonvolatile memory cell in a second memory bank using the read global bitline such that a discharge time period of the write global bitline is longer than a quenching time period of a write current which flows through the nonvolatile memory cell of the first memory bank.
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申请公布号 |
US2010046286(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20090544058 |
申请日期 |
2009.08.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI BYUNG-GIL |
分类号 |
G11C11/00;G11C7/00;G11C8/00;G11C8/08 |
主分类号 |
G11C11/00 |
代理机构 |
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地址 |
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