NON-VOLATILE SEMICONDUCTOR STORAGE APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage apparatus with high reliability at low cost. SOLUTION: A memory string MS has a plurality of columns CLmnelongated in a vertical direction with respect to a substrate Ba, and a semiconductor layer SCmnwith a connection part JPmnformed so as to connect lower ends of the plurality of columns CLmn. Word lines WL1 to WL4 are formed as plated electrodes surrounding the columns CLmn. In addition, a selection gate line SG is formed in a column direction as the longitudinal direction. A bit line BL is formed in a row direction as the longitudinal direction for each column CLmn. COPYRIGHT: (C)2010,JPO&INPIT