发明名称 PRESSURE SENSING
摘要 A high electron mobility transistor (HEMT) is disclosed capable of performing as a pressure sensor. In one embodiment, the subject pressure sensor can be used for the detection of body fluid pressure. A piezoelectric, biocompatible film can be used to provide a pressure sensing functionalized gate surface for the HEMT. Embodiments of the disclosed sensor can be integrated with a wireless transmitter for constant pressure monitoring.
申请公布号 WO2010022038(A2) 申请公布日期 2010.02.25
申请号 WO2009US54139 申请日期 2009.08.18
申请人 UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;REN, FAN;PEARTON, STEPHEN, JOHN 发明人 REN, FAN;PEARTON, STEPHEN, JOHN
分类号 G01L9/00;A61B5/0245;H01L41/08;H01L41/22 主分类号 G01L9/00
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