| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an electric charge holding characteristic and a writing/erasing characteristic by providing an insulation characteristic corresponding to a physical property value of a metallic oxide by manufacturing a nonvolatile semiconductor storage device by using a metallic oxide film as a block insulating film of a MONOS structure. Ž<P>SOLUTION: This manufacturing method of a MONOS type nonvolatile semiconductor storage device is constituted by laminating a tunnel insulating film 105, an electric charge storage layer 106, the block insulating film 107 including the metallic oxide and a control gate electrode 108 on a semiconductor substrate 101, and forms the control gate electrode 108 on the block insulating film 107 after applying heat treatment in an atmosphere including oxidizing gas, after laminating and forming the tunnel insulating film 105, the electric charge storage layer 106 and the block insulating film 107 on the semiconductor substrate 101. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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