发明名称 |
Programmable read only memory |
摘要 |
An array of memory cells is disclosed. The memory cell includes a fuse and at least one transistor. The transistor is used to control the programming or sensing of the fuse. A program voltage is applied to a stack of first and second conductive layers. A first portion of the stack couples the program voltage to a terminal of the transistor in a cell. A second portion of the stack couples the program voltage to a terminal of the transistor in another cell.
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申请公布号 |
US2010046269(A1) |
申请公布日期 |
2010.02.25 |
申请号 |
US20080229117 |
申请日期 |
2008.08.20 |
申请人 |
CHEN ZHANPING;KULKARNI SARVESH;ZHANG KEVIN |
发明人 |
CHEN ZHANPING;KULKARNI SARVESH;ZHANG KEVIN |
分类号 |
G11C17/00;G11C11/34;H01L21/82 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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