发明名称 |
DUAL-SIDED MICROSTRUCTURED, POSITION-SENSITIVE DETECTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a detector for measuring the position and/or energy of photons and/or charged particles. SOLUTION: The detector includes a plurality of diodes made of a semiconductor material, n-contacts (1) and p-contacts (4), and the n-contacts are provided by dividing an n-layer into individual segments. The segments of the n-layer are 20-500μm wide. The detector is produced by diffusing ions on one side of the semiconductor material in order to produce an n-layer. A metallic layer is vapor-deposited thereon. Trenches are etched and formed between the segments segmented by lithography. The detector has high performance, and inter alia, enables a high local resolution and a high measuring speed. COPYRIGHT: (C)2010,JPO&INPIT
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申请公布号 |
JP2010045377(A) |
申请公布日期 |
2010.02.25 |
申请号 |
JP20090212198 |
申请日期 |
2009.09.14 |
申请人 |
FORSCHUNGSZENTRUM JUELICH GMBH |
发明人 |
PROTIC DAVOR;KRINGS THOMAS;SCHLEICHERT RALF |
分类号 |
G01T1/24;H01L31/09;G01T1/29;H01L27/00;H01L27/14;H01L27/144;H01L27/146;H01L31/0288;H01L31/10;H01L31/105;H01L31/115;H01L31/117;H01L31/16;H01L31/18 |
主分类号 |
G01T1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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