| 摘要 |
<p>PURPOSE: An LDMOS semiconductor and a method for fabricating the same is provided to improve the breakdown voltage characteristic and resistance characteristic of the LDMOS through O2 ion implantation into a drift layer and an anneal process. CONSTITUTION: An LDMOS semiconductor device has a gate pattern and a source / drain region on an active area. The active area is defined by a field oxide film formed on the first conductive substrate(200). The channel region is connected to the source area. The channel region is formed within the substrate at the lower part of the gate pattern. A second conductive drift layer(210) is formed in the first conductive substrate. The second conductive drift layer is connected to the channel region and drain region. At least one box layer(215) is arranged within the drift layer.</p> |
