发明名称 |
Method for fabricating capacitor of semiconductor device |
摘要 |
The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from locally agglomerating; forming an impurity undoped second amorphous silicon layer on the first amorphous silicon layer in an in-situ condition; forming a storage node by patterning the first amorphous silicon layer and the second amorphous silicon layer; forming silicon grains on a surface of the storage node; and doping the impurity to the storage node and the silicon grains until reaching a second predetermined concentration for providing conductivity required by the storage node.
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申请公布号 |
US7666738(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20070952767 |
申请日期 |
2007.12.07 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
SHIN DONG-WOO;CHOI HYUNG-BOK;LEE JONG-MIN;KIM JIN-WOONG |
分类号 |
H01L21/8242;H01L27/04;H01L21/02;H01L21/3215;H01L21/82;H01L21/8239 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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