发明名称 SENSE AMPLIFIER OVERDRIVE SIGNAL GENERATING CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS INCLUDING THE SAME
摘要 PURPOSE: A sense amplifier overdrive signal generating circuit and a semiconductor memory apparatus including the same are provided to reduce the current by implementing an overdrive motion by adjusting a pulse length of an overdrive signal according to the operation of a semiconductor memory device. CONSTITUTION: A delay unit(10) delays a low enable signal as a designated time and generates a first delay signal. A delay controller delays the first delay signal as long as the variable delay time and generates the second delayed signal. An overdrive signal generator(30) generates the second delay signal and the overdrive signal by being inputted with the low enable signal. A refresh signal is enabled in the refresh operation mode. The refresh signal is disabled in the normal operation mode.
申请公布号 KR20100019714(A) 申请公布日期 2010.02.19
申请号 KR20080078407 申请日期 2008.08.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SONG, WOO SEOK
分类号 G11C7/06;G11C5/14;G11C7/08;G11C8/00 主分类号 G11C7/06
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