| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses occurrence of resist poisoning, and to provide a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor device having a via for electrically connecting first wiring and second wiring formed through an interlayer insulating layer includes: a first insulating layer formed on a semiconductor substrate and having a low dielectric constant, the first insulating layer having the higher dielectric constant on a surface than inside and also having a surface treated region having a lower dielectric constant than an insulating barrier film formed on the first insulating layer; first wiring formed on the first insulating layer; an insulating barrier film formed on the first wiring; a second insulating layer formed on the insulating barrier film; second wiring formed on the second insulating layer; and the via formed in the second insulating layer and electrically connecting the first wiring and second wiring to each other. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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