| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor inspection apparatus which uses electron beam and capable of attaining high accuracy of deflection control and of high-speed operation of the electron beam. Ž<P>SOLUTION: In the semiconductor inspection apparatus using an electron beam, a sample having a circuit pattern formed on a semiconductor wafer is irradiated with a narrowed electron beam, a secondary signal generated from the sample during an irradiation period of the electron beam is detected, the sample is scanned by deflection control repeating the irradiation period and a return period, and an image is generated from the detected secondary signal to inspect a defect on the sample. For the deflection control voltage during the irradiation period of the electron beam, only the value of a start voltage and the value of an end voltage during the irradiation period are set, the voltage is changed continuously between both the voltages, and this continuous change of the voltage is repeated for one line of scanning for deflection control of the electron beam so as to scan a plurality of lines. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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