| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an SOI wafer which has a uniform thickness distribution of an SOI layer within a wafer surface. SOLUTION: In the method for manufacturing the SOI wafer having an embedded oxide film and an SOI layer in this order on a supporting substrate, the SOI wafer is produced by a heat treatment process of forming thermal oxide films on the front and back surfaces of the SOI wafer, and then by a process of removing the thermal oxide films. The method of manufacturing the SOI wafer includes, subsequent to the process of removing the thermal oxide films, a process of making a thickness distribution of the SOI layer within the wafer surface uniform, wherein the thickness distribution of the SOI layer within the wafer surface where the thermal oxide films have been removed is measured and portions where the thickness distribution of the SOI layer is thick are removed by using ozone water and hydrofluoric acid. COPYRIGHT: (C)2010,JPO&INPIT |
