| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that is low in on-resistance by enhancing the channel mobility of an interface between a silicon carbide region and an oxide film, and to provide a method of manufacturing the same. SOLUTION: On the surface of an n-type SiC substrate 1, an n-type SiC epitaxial layer 2 and a p-type SiC epitaxial layer 3 are grown. When the p-type SiC epitaxial layer 3 is grown, a gas containing chemical species containing silicon (Si) (hereinafter Si species) and a gas containing chemical species containing carbon (C) (hereinafter C species) are supplied into a chamber. At this time, the gas containing Si species and the gas containing C species are supplied at a low flow rate C/Si ratio where the gas containing C species is supplied at the slowest speed, thereby growing the p-type SiC epitaxial layer 3. COPYRIGHT: (C)2010,JPO&INPIT
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