发明名称 CORRECTION OF IRRADIATION NONUNIFORMITY AND IMAGE DISTORTION
摘要 <P>PROBLEM TO BE SOLVED: To provide an improved aperture arrangement in a particle beam exposure device, the aperture arrangement being irradiated with a charged particle beam and allowing the beam to pass only through multiple apertures to form a pattern on a target. <P>SOLUTION: The exposure device has: an aperture array with multiple apertures of a same shape which define shapes and relative arrangement of beamls passing through the apertures; and a blanking means for switching off the travel of beamlets that have passed through the apertures to be defined and selected by them. The apertures are arranged on an aperture arraying means in accordance with an arrangement shifted from the regular arrangement by slight deviations, thereby correcting distortion caused by the particle beam exposure device, wherein aperture sizes of the aperture array differ all over the aperture array in order to correct currents radiated on the target thorough the apertures and corresponding openings. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010041055(A) 申请公布日期 2010.02.18
申请号 JP20090181392 申请日期 2009.08.04
申请人 IMS NANOFABRICATION AG 发明人 PLATZGUMMER ELMAR;FRAGNER HEINRICH;CERNUSCA STEFAN
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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