| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the yield of manufacturing of semiconductor device. <P>SOLUTION: An exposure method is of irradiating light to a mask that is formed with a first mask pattern and a second mask pattern, and of projecting images of the first mask pattern and the second mask pattern on a wafer, on which a lower layer film material and a photo resist are sequentially laminated via a projection lens, based on conditions under which exposure is carried out. When exposure is conducted under predetermined conditions, the conditions under which the exposure is conducted are changed, such that a difference between a position of the wafer where the image of the first mask pattern is to be in best focus and the position of the wafer where the image of the second mask pattern is to be in best focus, which is predicted by using a thick film of the photoresist and the lower layer film material, as well, as an optical characteristic, is a value within a predetermined range. <P>COPYRIGHT: (C)2010,JPO&INPIT |
