发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A nonvolatile semiconductor memory device comprises a cell array including a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a plurality of memory cells arranged in matrix and connected at intersections of the first and second lines between both lines, each memory cell containing a serial circuit of an electrically erasable programmable variable resistive element of which resistance is nonvolatilely stored as data and a non-ohmic element; and a plurality of access circuits operative to simultaneously access the memory cells physically separated from each other in the cell array. |
申请公布号 |
WO2010018715(A1) |
申请公布日期 |
2010.02.18 |
申请号 |
WO2009JP62019 |
申请日期 |
2009.06.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;NAGASHIMA, HIROYUKI;INOUE, HIROFUMI |
发明人 |
NAGASHIMA, HIROYUKI;INOUE, HIROFUMI |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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