| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of high-speed operation that excels in waterproof and reliability. SOLUTION: A primary insulating layer 20 with a conductive layer 5 of a primary copper forming a wiring and tertiary insulating layer 22 with a tertiary conductive copper 13 forming a wiring are laminated on the surface of a semiconductor substrate 1 via a secondary insulating layer 21 having a secondary conductive layer 10 of a secondary copper that penetrates both the conductive layer 5 of the primary copper and tertiary conductive layer 13 of the tertiary copper. At least one of the primary insulating layer 20, secondary insulating layer 21 and tertiary insulating layer 22 is composed of insulating materials using low dielectric constant materials having a borazine frame based structure in the inorganic or organic molecule materials. COPYRIGHT: (C)2006,JPO&NCIPI |
