发明名称 |
SOLID-STATE IMAGING DEVICE AND DIFFERENTIAL CIRCUIT |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compact solid-state imaging device which is suitable for expanding a dynamic range. <P>SOLUTION: The solid-state imaging device is equipped with: a photo diode 101 which is a photoelectric conversion section which generates electric charge from incident light; a MOS transistor 102 which is a first transfer section which is connected to the photo diode 101 and transfers the electric charge; a floating diffusion region 103 which is a first accumulation section for accumulating the electric charge via the MOS transistor 102; a MOS transistor 104 which is a second transfer section which is connected to the floating diffusion region 103 and is connected in series with the MOS transistor 102; and MOS transistors 106 and 107 which are output sections for outputting signal voltage in accordance with an amount of the electric charge via the MOS transistor 104. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010034890(A) |
申请公布日期 |
2010.02.12 |
申请号 |
JP20080195374 |
申请日期 |
2008.07.29 |
申请人 |
PANASONIC CORP |
发明人 |
MURATA TAKAHIKO;MORI MITSUYOSHI;KASUGA SHIGETAKA;YAMADA TAKAYOSHI;KATO TAKEHISA |
分类号 |
H01L27/146;H04N5/335;H04N5/341;H04N5/355;H04N5/369;H04N5/374;H04N5/376 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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