| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect an internal crack of a polycrystalline silicon wafer by calibrating differences between patterns of a wafer top-surface image by reflected light and a wafer transmission image by transmitted light. Ž<P>SOLUTION: Crystal grains are different in size between wafer top-surface image data obtained from reflected light of the polycrystalline silicon wafer 2 and wafer transmission image data obtained from infrared transmitted light of the polycrystalline silicon wafer 2. Consequently, a crack suspicious pixel which has a remarkable lightness difference due to an internal crack and a remarkable lightness difference due to a shift of a boundary of crystal grains etc., is detected from the difference values between the two image data. Adjacent crack suspicious pixels are linked and the crack is detected from a distribution state of the crack suspicious pixels. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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