METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING DUAL DAMASCENE PROCESS,申请号KR20020084259-传众专利搜索

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发明名称	METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING DUAL DAMASCENE PROCESS
摘要
申请公布号	KR100941629(B1)	申请公布日期	2010.02.11
申请号	KR20020084259	申请日期	2002.12.26
申请人		发明人
分类号	H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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