| 发明名称 |
CRYSTALLINE SILICON SUBSTRATES WITH IMPROVED MINORITY CARRIER LIFETIME |
| 摘要 |
A method for improving the minority lifetime of silicon containing wafer having metallic contaminants therein is described incorporating annealing at 1200° C. or greater and providing a gaseous ambient of oxygen, an inert gas and a chlorine containing gas such as HCl.
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| 申请公布号 |
US2010035409(A1) |
申请公布日期 |
2010.02.11 |
| 申请号 |
US20080186243 |
申请日期 |
2008.08.05 |
| 申请人 |
DE SOUZA JOEL P;HOVEL HAROLD JOHN;INNS DANIEL A;SADANA DEVENDRA K;SHAHIDI GHAVAM G |
发明人 |
DE SOUZA JOEL P;HOVEL HAROLD JOHN;INNS DANIEL A.;SADANA DEVENDRA K.;SHAHIDI GHAVAM G. |
| 分类号 |
H01L21/322 |
主分类号 |
H01L21/322 |
| 代理机构 |
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