| 摘要 |
PURPOSE: An image sensor and a method for manufacturing thereof are provided to prevent the decline of sensitivity and saturation by making a path for a photo charge through a charge connection area. CONSTITUTION: A readout circuit(120) and an interlayer dielectric layer(160) are formed in a first substrate(100). A wiring is formed an interlayer dielectric layer and is electrically connected to the readout circuit. An image sensing device(210) is formed on the bottom electrode(205). The image sensing device comprises a first conductive layer, an intrinsic layer, and a second conductive layer. A pixel dielectric isolation layer(207) is formed on the image sensing device as much as the height of the first conductive layer.
|
