发明名称 POWER SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To obtain a power semiconductor device reducing failures occurring in a main terminal section by the connection of external wiring, having high yield and excellent productivity, and sealed with a transfer molding resin with high reliability. <P>SOLUTION: In the power semiconductor device, a power semiconductor element that is bonded to the wiring pattern of a circuit board, a cylindrical external terminal communication section, and a wiring formation means for electrically connecting the power semiconductor element and the cylindrical external terminal communication section, etc., are sealed with a transfer molding resin. The cylindrical external terminal communication section is installed roughly perpendicularly to the wiring pattern, and the external terminal is inserted and connected to the cylindrical external terminal communication section. A plurality of cylindrical external terminal communication sections are two-dimensionally arranged in each of the wiring patterns acting as the main circuit. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010027814(A) 申请公布日期 2010.02.04
申请号 JP20080186603 申请日期 2008.07.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 OI TAKESHI;OKA SEIJI;TAIKAI YOSHIKO;USUI OSAMU;NAKAYAMA YASUSHI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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