| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic memory device having a configuration capable of stably and efficiently supplying a data writing current without causing an increase in memory cell size. SOLUTION: A write digit line WDL is connected to a power supply wiring 90 when the data writing current is supplied. In the vicinity of a terminal portion of the power supply wiring 90 side, the write digit line WDL has a reinforcing portion 95 in which a cross sectional area is increased compared to a stationary portion 93 corresponding to a position where an MTJ memory cell is disposed. With this configuration, the wiring width can be set in accordance with minimum design rules of the MTJ memory cell in the stationary portion 93 to dispose the memory cell in a high integration, and even if a decrease in wiring width because of movement of metal atoms is caused in the vicinity of terminal of the power supply wiring 90 side, a local increase in current density in this portion can be prevented from influencing reliability in operation. COPYRIGHT: (C)2010,JPO&INPIT
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