发明名称 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
摘要 A method of fabricating a semiconductor device and semiconductor device is provided. The method provides a first layer. The first layer includes through-holes. At least one semiconductor chip is provided. The semiconductor chip includes contact elements. The semiconductor chip is placed onto the first layer with the contact elements being aligned with the through-holes. An encapsulant material is applied over the semiconductor chip.
申请公布号 US2010025848(A1) 申请公布日期 2010.02.04
申请号 US20080185389 申请日期 2008.08.04
申请人 INFINEON TECHNOLOGIES AG 发明人 BEER GOTTFRIED;ESCHER-POEPPEL IRMGARD
分类号 H01L23/52;H01L21/00;H01L23/28 主分类号 H01L23/52
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