发明名称 |
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a semiconductor device and semiconductor device is provided. The method provides a first layer. The first layer includes through-holes. At least one semiconductor chip is provided. The semiconductor chip includes contact elements. The semiconductor chip is placed onto the first layer with the contact elements being aligned with the through-holes. An encapsulant material is applied over the semiconductor chip.
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申请公布号 |
US2010025848(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20080185389 |
申请日期 |
2008.08.04 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BEER GOTTFRIED;ESCHER-POEPPEL IRMGARD |
分类号 |
H01L23/52;H01L21/00;H01L23/28 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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