MOS TRANSISTOR, CMOS, AND MOTOR DRIVING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE CMOS

摘要

<P>PROBLEM TO BE SOLVED: To provide an MOS transistor allowing a temporal change rate of rise of an output waveform in drive to be made gentle only by the change of one mask without significantly changing a manufacturing process. Ž<P>SOLUTION: This MOS transistors 100, 100a include a plurality of transistor cells, wherein a plurality of gates 10 each extending by having a predetermined gate width W are arranged approximately parallel to each other on a semiconductor substrate 80, and sources 20 and drains 30 are alternately arranged on both sides of the gates. The MOS transistor has a gate wiring layer 70 overlapping both ends 11, 12 of the gates 10 in terms of a plan view, and arranged so that the same potential can be supplied from both the ends 11, 12 of the gates 10, and includes the transistor cells in each of which a gate contact 40 electrically connecting the gate wiring layer 70 to an end of the gate 10 is formed only on one side of the ends 11, 12 of the gate 10. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž