| 摘要 |
The subject of the invention is a light-emitting diode comprising a structure (1) in semiconductor material of first conductivity type and means for electric polarisation of the diode. The structure (1) has a first face (2) of which a first region is in contact with a pad (5) in semiconductor material of second conductivity type opposite the first conductivity type, the polarisation means comprise: an electric contact (7) on the pad (5), an electric contact(8) on the first face or on a second face (9) of the structure (1), a gate (3) in electrically conductive material arranged on a second region of the first face and separated from the first face by an electrically insulating layer (4).
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