发明名称 |
ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD |
摘要 |
When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
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申请公布号 |
US2010025821(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20070521019 |
申请日期 |
2007.12.20 |
申请人 |
NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED |
发明人 |
OHMI TADAHIRO;GOTO TETSUYA;TERAMOTO AKINOBU;MATSUOKA TAKAAKI |
分类号 |
H01L29/30;C23C16/00;H01L21/265 |
主分类号 |
H01L29/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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