发明名称 ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD
摘要 When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
申请公布号 US2010025821(A1) 申请公布日期 2010.02.04
申请号 US20070521019 申请日期 2007.12.20
申请人 NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED 发明人 OHMI TADAHIRO;GOTO TETSUYA;TERAMOTO AKINOBU;MATSUOKA TAKAAKI
分类号 H01L29/30;C23C16/00;H01L21/265 主分类号 H01L29/30
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