| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain high-speed data access in a magnetic storage device. Ž<P>SOLUTION: Source lines (SL0-SL3) arranged correspondingly to memory cell columns are driven by source line drivers (SLDR0, SLDR1) in accordance with read column selection signals (CSLR0, CSLR1). In a selected state of word lines (WL), a write current can be supplied into bit lines. Therefore, data can be continuously read out and/or written while the word lines are maintained in the selected state and high-speed access to a page mode or the like can be attained. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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