SOLID-STATE IMAGING DEVICE WITH VERTICAL GATE ELECTRODE AND METHOD OF MANUFACTURING THE SAME

摘要

A charge accumulation region of a first conductivity type is buried in a semiconductor substrate. A charge transfer destination diffusion layer of the first conductivity type is formed on a surface of the semiconductor substrate. A transfer gate electrode is formed on the charge accumulation region, and charge is transferred from the charge accumulation region to the charge transfer destination diffusion layer.