SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve reliability by preventing a metal element from being diffused to an intermediate layer arranged on a conductive layer. CONSTITUTION: An intermediate layer(20) is formed on a substrate(10). An opening is formed on the intermediate layer. A conductive layer(30) is formed on the opening. A cap film is formed on a surface of the conductive layer. When forming the cap film, the reduction process of the surface of the conductive layer and the film formation process are performed at the same.