Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium

摘要

Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.