NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME

摘要

PURPOSE: A non-volatile memory device and a memory system including the same are provided to reduce program time and high voltage stress by controlling a bias voltage to uniformize a difference between a word line voltage and a bit line voltage applied in each memory cell. CONSTITUTION: Memory cells are connected to a word line. Memory cells are arranged in a row direction. A bit line is connected to each memory cell. A bit line bias circuit(115) differently controls a bias voltage provided through the bit line according to the row direction of a memory cell. The bit line bias circuit controls a bias voltage to uniformize a difference between a word line voltage and a bit line voltage applied in each memory cell in a plurality of memory cells.