| 摘要 |
PURPOSE: A method of manufacturing semiconductor device is provided to form easily the STI (Shallow Trench Isolation) by forming thin amorphous silicon film. CONSTITUTION: The amorphous silicon film(14) is formed. The amorphous silicon film covers the semiconductor substrate(11). A part of the semiconductor substrate and amorphous silicon film is removed. The device isolation groove is formed in the surface of the semiconductor substrate. The insulating layer(16) is formed on the amorphous silicon film. The insulating layer fills in the device isolation groove. The chemical mechanical polishing of the insulating layer is performed. The upper side of the insulating layer is planarized. In the chemical mechanical polishing, the amorphous silicon film is used as the stopper.
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