METHOD FOR PREPARING FILMS AND DEVICES UNDER HIGH NITROGEN CHEMICAL POTENTIAL

摘要

PURPOSE: A method for preparing films and devices under high nitrogen chemical potential are provided to obtain reduced not-radial vacancy defect density. CONSTITUTION: The growth substrate(12) is located within the reactor growth chamber(16). The precursor gas is inserted within the growth chamber. At least, the precursor gas is nearly inserted in the growth surface of the growth substrate. The precursor gas is nitrogen source. The group III alkyl is inserted within the growth chamber. The group III alkyl is inserted at a temperature of the pyrolysis temperature or less.