| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method relative to a magnetic resistance random access memory (MRAM) and theimprovement thereof, especially, a method relative to the conversion of a low-resistance cell in the MRAM device into a capacitance cell. <P>SOLUTION: A method for converting a low-resistance cell into a capacitance cell in an MRAM device is disclosed. The low-resistance cell has a plurality of layers on a substrate. At least one layer separated from the substrate receives an effect of oxygen injection easily. The method includes a step for removing a cap layer of the cell in order to expose at least one portion of the surface of at least one layer separated from the substrate and a step for applying oxygen barriers to the periphery of the cell. At least the one layer is oxidized. The oxygen barriers are removed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
