| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which a wiring layer buried in a low-dielectric constant film is formed as designed without causing an open defect when the wiring layer is formed by a dual-damascene method. SOLUTION: The method for manufacturing the semiconductor device includes: removing the low-dielectric-constant film 42, a first hard mask 44, and a second hard mask 46 in a via-hole forming region to form a via hole 52 in the low-dielectric-constant film 42; removing the second hard mask 46 in a wiring trench forming region; and etching the first hard mask 44 using the second hard mask 46 as a mask to remove the first hard mask 44 in the wiring trench forming region. Removing the first hard mask 44 in the wiring trench forming region includes etching a barrier film 40 at the bottom of the via hole 52 to partially remove the barrier film 40 at the bottom of the via hole 52. COPYRIGHT: (C)2010,JPO&INPIT |
