| 摘要 |
The present invention is a high-efficiency solar cell having a top cell [1300] optimized to absorb incident radiant energy in a first absorption band and a bottom cell [1500] attached to the top cell optimized to absorb incident energy in a second absorption band which preferably does not substantially overlap the first absorption band. The top cell [1300] employs a first layer [1310] being a highly doped n-type material, a second layer [1330] being a lightly doped n-type material in contact with the first layer [1310], and a p-type material [1350] in contact with the second layer [1330] optimized to pass the lower frequencies of incident radiation to the bottom cell [1500]. The bottom cell [1500] has a quantum cell region [1550] comprised of a plurality of quantum wells. The quantum wells are designed to absorb near 1 eV. Alternatively, the incident radiant energy may be diffracted into frequency bands with each solar cell tuned to absorb one specific band.
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