| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for detecting a polishing end point, capable of surely monitoring a polishing end point of an Si layer in polishing an SOI wafer in which a reflection rate waveform moves at a short cycle as the surface Si layer is polished. <P>SOLUTION: The method has an analyzing step of analyzing light reflected from the surface of an SOI wafer during polishing. The analyzing step has: a first step of applying Fourier transform in real time to a wavelength or wave number of an actually measured spectrum waveform having periodicity; a second step of extracting a periodic component corresponding to the film thickness of the Si layer in the SOI wafer, out of each periodic component subjected to the Fourier transform; and a third step of transforming the film thickness of the Si layer in real time from the extracted periodic component. <P>COPYRIGHT: (C)2010,JPO&INPIT |
