| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the speed to measure the cell signal volume distribution by shortening the external reference voltage charging time on the bit lines in the test mode. Ž<P>SOLUTION: A semiconductor storage device 1 has memory cells 10, 20 including data holding capacitors, a plurality of word lines WL0, WL1 to select memory cells, bit lines BL0, BL1 for reading the signals of the memory cells selected by the word lines, precharge circuits 14, 24 to precharge the bit line paired with the bit lines connected to the selected memory cell by applying to it the external reference voltage Vdr to compare with the voltage produced in the bit line when selecting the memory cell, precharge assist circuits 12, 22 connected to the bit lines in parallel with the precharge circuits to charge the bit lines, and a sense amplifier 6 connected to the pair of bit lines to detect and amplify the potential of the bit line connected to the selected memory cell. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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