| 摘要 |
PURPOSE: A bit line sensing voltage supply unit of a nonvolatile memory device is provided to solve the problem of a read operation and a verification operation due to the temperature variation by applying different bit line sensing voltages by reflecting the temperature variation. CONSTITUTION: A temperature voltage output unit(610) supplies a temperature voltage which increases in proportion to the size of an external temperature. A comparator(620) compares the size of a reference voltage with the size of the temperature voltage. A pull-up unit supplies a high voltage which increase in proportion to the size of the output voltage of the comparator. A voltage distributor(640) distributes the high voltage into a first voltage and a second voltage.
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