| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device formed on an SOI substrate and having a high ESD resistance property. Ž<P>SOLUTION: A MOS transistor 2 is formed on an SOI substrate and at least one of diodes 3 and a resistor 4 are connected in series between a source electrode and a drain electrode of the MOS transistor, and connecting the gate electrode 5 of the MOS transistor 2 to the connection point of the diode and the resistor enhances the ESD resistance property. Further, connecting the connection point of the diode and the resistor to a body contact region 6 can provide a further high ESD resistance property. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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