| 摘要 |
<p>A compound semiconductor device having a transistor structure, includes a substrate, a first layer (3) formed on the substrate and comprising GaN, a second layer (4) formed over the first layer and containing InN whose lattice constant is larger than the first layer, a third layer (5) formed over the second layer and comprising GaN whose energy bandgap is smaller than the second layer, and a channel region layer (2DEG) formed on the third layer.
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