GROUP III NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND EPITAXIAL WAFER

摘要

PURPOSE: A group III nitride based semiconductor light emitting element and an epitaxial wafer is provided to improve the quantum efficiency by reducing the overflow of the hole from an active layer. CONSTITUTION: In a group III nitride based semiconductor light emitting element and an epitaxial wafer, an n-type gallium nitride semiconductor area(13) has a main surface(13a). The main side is expanded along a predetermined plane. A hole block layer(17) is formed with a first gallium nitride group semiconductor. An active layer(19) is provided between the p-type gallium nitride-based semiconductor region(15) and the hole blocking layer. The active layer is formed with the gallium nitride group semiconductor.